vs-10ctq150pbf, vs-10ctq150-n3 www.vishay.com vishay semiconductors revision: 22-aug-11 1 document number: 94115 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 schottky rectifier, 2 x 5 a features ? 175 c t j operation ? center tap configuration ? low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? guard ring for enhanced ruggedness and long term reliability ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) description this center tap schottky rectif ier series has been optimized for low reverse leakage at hi gh temperature. the proprietary barrier technology allows for re liable operation up to 175 c junction temperature. typical applications are in switching power supplies, converters , freewheeling diodes, and reverse battery protection. product summary package to-220ab i f(av) 2 x 5 a v r 150 v v f at i f 0.73 v i rm max. 7 ma at 125 c t j max. 175 c diode variation common cathode e as 6.75 mj anode 13 2 base common cathode 2 common cathode anode to-220ab major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 10 a v rrm 150 v i fsm t p = 5 s sine 620 a v f 5 a pk , t j = 125 c (per leg) 0.73 v t j range - 55 to 175 c voltage ratings parameter symbol vs-10ctq150pbf vs-10ctq150-n3 units maximum dc reverse voltage v r 150 150 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 5 per leg i f(av) 50 % duty cycle at t c = 155 c, rectangular waveform 5 a per device 10 maximum peak one cycle non-repetitive surge current per leg see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 620 a 10 ms sine or 6 ms rect. pulse 115 non-repetitive avalanche energy per leg e as t j = 25 c, i as = 0.30 a, l = 150 mh 6.75 mj repetitive avalanche current per leg i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 0.30 a
vs-10ctq150pbf, vs-10ctq150-n3 www.vishay.com vishay semiconductors revision: 22-aug-11 2 document number: 94115 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop per leg see fig. 1 v fm (1) 5 a t j = 25 c 0.93 v 10 a 1.10 5 a t j = 125 c 0.73 10 a 0.86 maximum reverse leakage current per leg see fig. 2 i rm (1) t j = 25 c v r = rated v r 0.05 ma t j = 125 c 7 threshold voltage v f(to) t j = t j maximum 0.468 v forward slope resistance r t 28 m ? maximum junction ca pacitance per leg c t v r = 5 v dc (test signal range 100 khz to 1 mhz) 25 c 200 pf typical series inductance per leg l s measured lead to lead 5 mm from package body 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 175 c maximum thermal resistance, junction to case per leg r thjc dc operation 3.50 c/w maximum thermal resistance, junction to ca se per package 1.75 typical thermal resistance, case to heatsink (only for to-220) r thcs mounting surface, smooth and greased 0.50 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab 10ctq150
vs-10ctq150pbf, vs-10ctq150-n3 www.vishay.com vishay semiconductors revision: 22-aug-11 3 document number: 94115 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 100 10 1 v fm - forward voltage drop (v) i f - instantaneous forward current (a) 0 2.5 0.5 1.0 1.5 2.0 3.0 t j = 25 c t j = 175 c t j = 125 c v r - reverse voltage (v) i r - reverse current (ma) 0.0001 0.001 0.01 0.1 1 0 25 50 75 100 125 150 10 100 t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 1000 100 v r - reverse voltage (v) c t - junction capacitance (pf) 0 10 40 140 80 120 160 t j = 25 c 20 60 100 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-10ctq150pbf, vs-10ctq150-n3 www.vishay.com vishay semiconductors revision: 22-aug-11 4 document number: 94115 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current (per leg) fig. 6 - forward power loss characteristics (per leg) fig. 7 - maximum non-repeti tive surge current (per leg) fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 10 v i f(av) - average forward current (a) allowable case temperature (c) 120 130 140 150 160 170 180 02468 see note (1) dc square wave (d = 0.50) 80 % rated v r applied i f(av) - average forward current (a) average power loss (w) 0123456 8 0 1 2 4 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 7 3 5 t p - square wave pulse duration (s) i fsm - non-repetitive surge current (a) 10 100 1000 10 000 100 1000 at any rated load condition and with rated v rrm applied following surge current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02
vs-10ctq150pbf, vs-10ctq150-n3 www.vishay.com vishay semiconductors revision: 22-aug-11 5 document number: 94115 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-10ctq150pbf 50 1000 antistatic plastic tube vs-10ctq150-n3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95222 part marking information to-220ab pbf www.vishay.com/doc?95225 to-220ab -n3 www.vishay.com/doc?95028 2 - current rating (10 = 10 a) 3 - circuit configuration c = common cathode 4 - package t = to-220 5 - schottky ?q? series 6 - voltage rating (150 = 150 v) 7 - pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant, and totally lead (pb)-free device code 5 1 3 2 4 6 7 vs- 10 c t q 150 pbf 1 - vishay semiconductors product environmental digit
document number: 95222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 08-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ab outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0.005" ) per side. these dimensions are measured at the outermost extremes of th e plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimensions: inches (6) thermal pad contour optional within dimensions e, h1, d2 and e1 (7) dimensions e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to- 220, except a2 (maximum) and d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e 10.11 10.51 0.398 0.414 3, 6 a1 1.14 1.40 0.045 0.055 e1 6.86 8.89 0.270 0.350 6 a2 2.56 2.92 0.101 0.115 e2 - 0.76 - 0.030 7 b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 h1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 l 13.52 14.02 0.532 0.552 c 0.36 0.61 0.014 0.024 l1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 ? p 3.54 3.73 0.139 0.147 d 14.85 15.25 0.585 0.600 3 q 2.60 3.00 0.102 0.118 d1 8.38 9.02 0.330 0.355 ? 90 to 93 90 to 93 d2 11.68 12.88 0.460 0.507 6 13 2 d d1 h1 q 13 2 c c d d 3 x b2 3 x b (b, b2) b1, b3 (h1) d2 detail b c a b l e1 lead tip e e2 ? p 0.014 a b m m 0.015 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1. - anode/open 2. - cathode 3. - anode conforms to jedec outline to-220ab (6) (6) (7) (6) (7) e 2 x l1 (2) detail b s ection c - c and d - d view a - a ba s e metal plating (4) (4) c1 c (6) thermal pad (e) e1 (6)
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